STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 248-9687P
- 製造零件編號:
- STP60N043DM9
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計 10 件 (以管提供)*
TWD3,820.00
(不含稅)
TWD4,011.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 720 件從 2026年10月19日 起發貨
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單位 | 每單位 |
|---|---|
| 10 - 19 | TWD382.00 |
| 20 - 29 | TWD376.00 |
| 30 - 39 | TWD367.00 |
| 40 + | TWD359.00 |
* 參考價格
- RS庫存編號:
- 248-9687P
- 製造零件編號:
- STP60N043DM9
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Standards/Approvals | UL | |
| Width | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 28.9mm | ||
Standards/Approvals UL | ||
Width 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.
Fast recovery body diode
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
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