Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R014M1HXKSA1

RS庫存編號:: 248-6667
製造零件編號:: IMW120R014M1HXKSA1
製造商:: Infineon

Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R014M1HXKSA1

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TWD859.00

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RS庫存編號:: 248-6667
製造零件編號:: IMW120R014M1HXKSA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	52A
	Maximum Drain Source Voltage Vds	75V
	Series	IMW
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 52A
	Maximum Drain Source Voltage Vds 75V
	Series IMW
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMW120R014M1HXKSA1

The Infineon CoolSiC 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

VDSS - 1200 V at T - 25°C

IDCC - 127 A at T - 25°C

RDS(on) - 14 mohm at VGS - 18 V, T - 25°C

Very low switching losses

Short circuit withstand time 3 microsecond

Benchmark gate threshold voltage, VGS(th) - 4.2 V

Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R014M1HXKSA1

訂單超過 $1,300.00 免費送貨

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