Infineon IMW Type N-Channel MOSFET, 52 A, 75 V P, 3-Pin TO-247 IMW120R090M1HXKSA1
- RS庫存編號:
- 244-2924
- 製造零件編號:
- IMW120R090M1HXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD194.00
(不含稅)
TWD203.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 441 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD194.00 |
| 10 - 39 | TWD192.00 |
| 40 - 79 | TWD191.00 |
| 80 - 119 | TWD187.00 |
| 120 + | TWD176.00 |
* 參考價格
- RS庫存編號:
- 244-2924
- 製造零件編號:
- IMW120R090M1HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IMW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IMW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IMW120R090M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
相關連結
- Infineon IMW Type N-Channel MOSFET 75 V P, 3-Pin TO-247
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R020M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R014M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R007M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R140M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R030M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R040M1HXKSA1