DiodesZetex Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin PowerDI3333-8 DMT32M4LFG-7
- RS庫存編號:
- 246-7548
- 製造零件編號:
- DMT32M4LFG-7
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD211.00
(不含稅)
TWD221.55
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,985 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD42.20 | TWD211.00 |
| 50 - 95 | TWD41.20 | TWD206.00 |
| 100 - 245 | TWD40.00 | TWD200.00 |
| 250 - 995 | TWD39.40 | TWD197.00 |
| 1000 + | TWD38.40 | TWD192.00 |
* 參考價格
- RS庫存編號:
- 246-7548
- 製造零件編號:
- DMT32M4LFG-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.028mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.028mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has an excellent Qgd xRDS(ON) product (FOM) and advanced technology for DC-DC conversion.
Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±20 V It provides small form factor thermally and efficient package enables higher density end products It occupies just 33% of the board area occupied by SO-8 enabling smaller end product
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