DiodesZetex DMN Type N-Channel MOSFET, 4 A, 60 V Enhancement, 8-Pin PowerDI3333-8 DMN6069SFVW-7
- RS庫存編號:
- 246-7519
- 製造零件編號:
- DMN6069SFVW-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD402.50
(不含稅)
TWD422.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,925 件從 2026年1月01日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD16.10 | TWD402.50 |
| 50 - 75 | TWD15.60 | TWD390.00 |
| 100 - 225 | TWD15.40 | TWD385.00 |
| 250 - 975 | TWD15.00 | TWD375.00 |
| 1000 + | TWD14.60 | TWD365.00 |
* 參考價格
- RS庫存編號:
- 246-7519
- 製造零件編號:
- DMN6069SFVW-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | PowerDI3333-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.85mm | |
| Width | 2 mm | |
| Standards/Approvals | No | |
| Length | 2.7mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type PowerDI3333-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Height 0.85mm | ||
Width 2 mm | ||
Standards/Approvals No | ||
Length 2.7mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers a small form factor and thermally efficient package enables higher density end products It offers a small form factor thermally efficient package enables higher density end products Wettable Flank for Improved Optical Inspections
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