DiodesZetex Dual 2 Type P-Channel MOSFET, 30 V Enhancement, 6-Pin SOT-363 DMP31D7LDWQ-7
- RS庫存編號:
- 246-7532
- 製造零件編號:
- DMP31D7LDWQ-7
- 製造商:
- DiodesZetex
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可享批量折扣
小計（1 包，共 25 件）*
TWD160.00
(不含稅)
TWD168.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,975 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD6.40 | TWD160.00 |
| 50 - 75 | TWD6.20 | TWD155.00 |
| 100 - 225 | TWD6.10 | TWD152.50 |
| 250 - 975 | TWD5.90 | TWD147.50 |
| 1000 + | TWD5.80 | TWD145.00 |
* 參考價格
- RS庫存編號:
- 246-7532
- 製造零件編號:
- DMP31D7LDWQ-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Power Dissipation Pd | 0.29W | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Power Dissipation Pd 0.29W | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance
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