DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 6-Pin TSOT-26 DMP3097LQ-7
- RS庫存編號:
- 246-7531
- 製造零件編號:
- DMP3097LQ-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD275.00
(不含稅)
TWD288.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,775 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD11.00 | TWD275.00 |
| 50 - 75 | TWD10.80 | TWD270.00 |
| 100 - 225 | TWD10.50 | TWD262.50 |
| 250 - 975 | TWD10.10 | TWD252.50 |
| 1000 + | TWD9.90 | TWD247.50 |
* 參考價格
- RS庫存編號:
- 246-7531
- 製造零件編號:
- DMP3097LQ-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TSOT-26 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TSOT-26 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT23 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate.
Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage
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