DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 6-Pin SOT-363 DMN61D9UDWQ-7
- RS庫存編號:
- 246-7520
- 製造零件編號:
- DMN61D9UDWQ-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD122.50
(不含稅)
TWD128.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,225 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD4.90 | TWD122.50 |
| 50 - 75 | TWD4.80 | TWD120.00 |
| 100 - 225 | TWD4.70 | TWD117.50 |
| 250 - 975 | TWD4.50 | TWD112.50 |
| 1000 + | TWD4.40 | TWD110.00 |
* 參考價格
- RS庫存編號:
- 246-7520
- 製造零件編號:
- DMN61D9UDWQ-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.37W | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.37W | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 60 Vand maximum gate to source voltage is ±20 V It offers a ultra-small package size It has low input/output leakage
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