DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN DMN2310UFD-7
- RS庫存編號:
- 246-7511
- 製造零件編號:
- DMN2310UFD-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD207.50
(不含稅)
TWD218.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,875 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD8.30 | TWD207.50 |
| 50 - 75 | TWD8.20 | TWD205.00 |
| 100 - 225 | TWD7.90 | TWD197.50 |
| 250 - 975 | TWD7.80 | TWD195.00 |
| 1000 + | TWD7.60 | TWD190.00 |
* 參考價格
- RS庫存編號:
- 246-7511
- 製造零件編號:
- DMN2310UFD-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 890mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.25mm | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Height | 0.53mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 890mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.25mm | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Height 0.53mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage
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