DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN
- RS庫存編號:
- 246-6796
- 製造零件編號:
- DMN2451UFB4-7B
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 10000 件）*
TWD15,000.00
(不含稅)
TWD15,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 10000 - 10000 | TWD1.50 | TWD15,000.00 |
| 20000 - 40000 | TWD1.50 | TWD15,000.00 |
| 50000 + | TWD1.40 | TWD14,000.00 |
* 參考價格
- RS庫存編號:
- 246-6796
- 製造零件編號:
- DMN2451UFB4-7B
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 900mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.4mm | |
| Length | 1.05mm | |
| Standards/Approvals | No | |
| Width | 0.65 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 900mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.4mm | ||
Length 1.05mm | ||
Standards/Approvals No | ||
Width 0.65 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1006-3 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
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