Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223 IPN60R2K0PFD7SATMA1
- RS庫存編號:
- 244-2267
- 製造零件編號:
- IPN60R2K0PFD7SATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD107.00
(不含稅)
TWD112.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,710 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD21.40 | TWD107.00 |
| 10 - 95 | TWD21.00 | TWD105.00 |
| 100 - 245 | TWD20.60 | TWD103.00 |
| 250 - 495 | TWD20.00 | TWD100.00 |
| 500 + | TWD19.40 | TWD97.00 |
* 參考價格
- RS庫存編號:
- 244-2267
- 製造零件編號:
- IPN60R2K0PFD7SATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss,excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Integrated zener diode
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