DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement DMT10H4M9SPSW-13
- RS庫存編號:
- 244-1930
- 製造零件編號:
- DMT10H4M9SPSW-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD439.00
(不含稅)
TWD460.95
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,500 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD87.80 | TWD439.00 |
| 50 - 95 | TWD85.60 | TWD428.00 |
| 100 - 245 | TWD83.40 | TWD417.00 |
| 250 - 995 | TWD81.40 | TWD407.00 |
| 1000 + | TWD79.20 | TWD396.00 |
* 參考價格
- RS庫存編號:
- 244-1930
- 製造零件編號:
- DMT10H4M9SPSW-13
- 製造商:
- DiodesZetex
規格
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET packaging is reel.
Mounting type is surface mount
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