DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC DMT68M8LSS-13
- RS庫存編號:
- 246-7558
- 製造零件編號:
- DMT68M8LSS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD360.00
(不含稅)
TWD378.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,000 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD14.40 | TWD360.00 |
| 50 - 75 | TWD14.10 | TWD352.50 |
| 100 - 225 | TWD13.70 | TWD342.50 |
| 250 - 975 | TWD13.40 | TWD335.00 |
| 1000 + | TWD13.10 | TWD327.50 |
* 參考價格
- RS庫存編號:
- 246-7558
- 製造零件編號:
- DMT68M8LSS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.85 mm | |
| Length | 4.9mm | |
| Height | 1.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 3.85 mm | ||
Length 4.9mm | ||
Height 1.45mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate
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