Infineon IAUT N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263 IAUT300N08S5N014ATMA1
- RS庫存編號:
- 244-0892
- 製造零件編號:
- IAUT300N08S5N014ATMA1
- 製造商:
- Infineon
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享受批量購買折扣
額外添加4000件可節省TWD6,400.00
查看批量定價選項小計（1 卷，共 2000 件）*
TWD161,400.00
(不含稅)
TWD169,480.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月06日 發貨
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單位 | 每單位 | 每卷* | 節省 |
|---|---|---|---|
| 2000 - 2000 | TWD80.70 | TWD161,400.00 | - |
| 4000 + | TWD79.10 | TWD158,200.00 | TWD6,400.00 |
* 參考價格
- RS庫存編號:
- 244-0892
- 製造零件編號:
- IAUT300N08S5N014ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | IAUT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series IAUT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
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