Infineon IAUT Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263
- RS庫存編號:
- 244-0892
- 製造零件編號:
- IAUT300N08S5N014ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD143,200.00
(不含稅)
TWD150,360.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD71.60 | TWD143,200.00 |
| 4000 + | TWD70.20 | TWD140,400.00 |
* 參考價格
- RS庫存編號:
- 244-0892
- 製造零件編號:
- IAUT300N08S5N014ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | IAUT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series IAUT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
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