製造零件編號

Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252

RS庫存編號:: 244-0879
製造零件編號:: IPD650P06NMATMA1
製造商:: Infineon

Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD52,500.00

(不含稅)

TWD55,125.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月22日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 2500	TWD21.00	TWD52,500.00
5000 +	TWD20.40	TWD51,000.00

* 參考價格

RS庫存編號:: 244-0879
製造零件編號:: IPD650P06NMATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD650P06NMATMA1

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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