Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR
- RS庫存編號:
- 243-9288
- 製造零件編號:
- AUIRF7343QTR
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD111.00
(不含稅)
TWD116.56
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 15,970 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD55.50 | TWD111.00 |
| 10 - 98 | TWD53.50 | TWD107.00 |
| 100 - 248 | TWD53.00 | TWD106.00 |
| 250 - 498 | TWD50.50 | TWD101.00 |
| 500 + | TWD49.00 | TWD98.00 |
* 參考價格
- RS庫存編號:
- 243-9288
- 製造零件編號:
- AUIRF7343QTR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.11mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type SOIC | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.11mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
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