Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ
- RS庫存編號:
- 243-4890
- 製造零件編號:
- PXP6R1-30QLJ
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD361.00
(不含稅)
TWD379.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月09日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD36.10 | TWD361.00 |
| 50 - 90 | TWD35.30 | TWD353.00 |
| 100 - 240 | TWD34.20 | TWD342.00 |
| 250 - 990 | TWD33.70 | TWD337.00 |
| 1000 + | TWD32.90 | TWD329.00 |
* 參考價格
- RS庫存編號:
- 243-4890
- 製造零件編號:
- PXP6R1-30QLJ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 22.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 22.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
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