製造零件編號

Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ

RS庫存編號:: 243-4890
製造零件編號:: PXP6R1-30QLJ
製造商:: Nexperia

Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD312.00

(不含稅)

TWD327.60

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月28日發貨

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單位	每單位	每包*
10 - 40	TWD31.20	TWD312.00
50 - 90	TWD30.50	TWD305.00
100 - 240	TWD29.60	TWD296.00
250 - 990	TWD29.10	TWD291.00
1000 +	TWD28.40	TWD284.00

* 參考價格

RS庫存編號:: 243-4890
製造零件編號:: PXP6R1-30QLJ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	MLPAK33
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type MLPAK33
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - PXP6R1-30QLJ

The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.

Low threshold voltage

Trench MOSFET technology

High-side load switch

Battery management

DC-to-DC conversion

Switching circuits

Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ

訂單超過 $1,300.00 免費送貨

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