Nexperia Type P-Channel MOSFET, 13.7 A, 20 V Enhancement, 8-Pin MLPAK33
- RS庫存編號:
- 243-4882
- 製造零件編號:
- PXP018-20QXJ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD24,300.00
(不含稅)
TWD25,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD8.10 | TWD24,300.00 |
| 15000 + | TWD7.80 | TWD23,400.00 |
* 參考價格
- RS庫存編號:
- 243-4882
- 製造零件編號:
- PXP018-20QXJ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field-effect transistor (FET) in an MLPAK33 (SOT8002) surface-mounted device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
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