Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1
- RS庫存編號:
- 241-9873
- 製造零件編號:
- BSC019N06NSATMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 241-9873
- 製造零件編號:
- BSC019N06NSATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8 FL | |
| Series | BSC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8 FL | ||
Series BSC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC019N06NSATMA1
This MOSFET is a high-current N-channel switching device designed for surface-mount power applications where low on-resistance and fast gate response are required. It operates across a wide temperature span suitable for demanding environments and is supplied in a Compact TDSON-8 FL package for board-level integration.
Features and Benefits:
• Ultra-low Rds(on) 0.7 mΩ reduces conduction losses and heat generation
• Maximum continuous Id 381 A supports high-current delivery in systems
• Vds 40 V permits use in mid-voltage power rails and converters
• Pd 81 W enables significant power handling without immediate thermal runaway
• Qg 80 nC gate charge allows Rapid switching for dynamic loads
• Vgs 20 V gate rating affords flexible gate-drive voltages for control circuits
• Maximum continuous Id 381 A supports high-current delivery in systems
• Vds 40 V permits use in mid-voltage power rails and converters
• Pd 81 W enables significant power handling without immediate thermal runaway
• Qg 80 nC gate charge allows Rapid switching for dynamic loads
• Vgs 20 V gate rating affords flexible gate-drive voltages for control circuits
Applications
• Suitable for high-current synchronous rectification stages
• Ideal for power conversion in server and telecoms equipment
• Used for motor-drive half-bridges and H‑bridge configurations
• Can be used for battery management and DC-DC converters
• Used with high-power MOSFET arrays on Compact power boards
• Ideal for power conversion in server and telecoms equipment
• Used for motor-drive half-bridges and H‑bridge configurations
• Can be used for battery management and DC-DC converters
• Used with high-power MOSFET arrays on Compact power boards
What package and mounting style does it use?
It is supplied in a TDSON-8 FL package and intended for surface mounting on PCBs.
What thermal range can it withstand in operation?
The device functions between −55 °C and 175 °C for extended environmental tolerance.
What characteristic affects switching speed and gate drive requirements?
The typical gate charge is 80 nC which determines drive current and switching transitions.
How does the forward voltage impact conduction performance?
A forward voltage of 1 V influences power loss during conduction and must be accounted for in thermal design.
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