製造零件編號

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN

RS庫存編號:: 241-9698
製造零件編號:: BSZ018NE2LSIATMA1
製造商:: Infineon

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 5000 件）*

TWD116,000.00

(不含稅)

TWD121,800.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 5,000 個，準備發貨

單位	每單位	每卷*
5000 - 5000	TWD23.20	TWD116,000.00
10000 +	TWD22.50	TWD112,500.00

* 參考價格

RS庫存編號:: 241-9698
製造零件編號:: BSZ018NE2LSIATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PQFN
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Package Type PQFN
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ018NE2LSIATMA1

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.

Monolithic integrated Schottky like diode

Halogen-free according to IEC61249-2-21

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN

訂單超過 $1,300.00 免費送貨

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