Microchip MSC025SMA120B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS庫存編號:
- 241-9250
- 製造零件編號:
- MSC025SMA120B4
- 製造商:
- Microchip
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查看批量定價選項小計（1 管，共 30 件）*
TWD37,527.00
(不含稅)
TWD39,403.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 30 件從 2026年6月22日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD1,250.90 | TWD37,527.00 |
| 120 + | TWD1,225.90 | TWD36,777.00 |
* 參考價格
- RS庫存編號:
- 241-9250
- 製造零件編號:
- MSC025SMA120B4
- 製造商:
- Microchip
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | MSC025SMA120B4 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series MSC025SMA120B4 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications. The MSC025SMA120B4 device is a 1200 V 25 mΩ Sic MOSFET in a TO 247 4 lead package with a source sense.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature T equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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