Nexperia N-Channel MOSFET, 11.4 A, 30 V Enhancement, 8-Pin MLPAK33
- RS庫存編號:
- 240-2000
- 製造零件編號:
- PXN9R0-30QLJ
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD44,400.00
(不含稅)
TWD46,620.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD14.80 | TWD44,400.00 |
| 6000 + | TWD14.40 | TWD43,200.00 |
* 參考價格
- RS庫存編號:
- 240-2000
- 製造零件編號:
- PXN9R0-30QLJ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
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