製造零件編號

STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

RS庫存編號:: 240-0611
製造零件編號:: STW75N65DM6-4
製造商:: STMicroelectronics

STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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可享批量折扣

小計（1 托盤，共 30 件）*

TWD12,312.00

(不含稅)

TWD12,927.60

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每托盤*
30 - 30	TWD410.40	TWD12,312.00
60 - 60	TWD398.10	TWD11,943.00
90 +	TWD386.10	TWD11,583.00

* 參考價格

RS庫存編號:: 240-0611
製造零件編號:: STW75N65DM6-4
製造商:: STMicroelectronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	30V
	Series	STW
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	480W
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	118nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	5.1mm
	Length	40.92mm
	Standards/Approvals	UL
	Width	15.8 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 30V
	Series STW
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 480W
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 118nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 5.1mm
	Length 40.92mm
	Standards/Approvals UL
	Width 15.8 mm
	Automotive Standard AEC-Q101

Datasheet - STW75N65DM6-4

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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