STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP80N240K6

RS庫存編號:: 239-5543
製造零件編號:: STP80N240K6
製造商:: STMicroelectronics

STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP80N240K6

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小計（1 管，共 50 件）*

TWD7,470.00

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TWD7,843.50

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單位	每單位	每管*
50 - 50	TWD149.40	TWD7,470.00
100 - 100	TWD146.40	TWD7,320.00
150 +	TWD143.50	TWD7,175.00

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RS庫存編號:: 239-5543
製造零件編號:: STP80N240K6
製造商:: STMicroelectronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	STP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Height	4.6mm
	Length	28.9mm
	Width	10.4mm
	Standards/Approvals	UL
	Automotive Standard	AEC-Q101

	選取全部
	品牌 STMicroelectronics
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series STP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Height 4.6mm
	Length 28.9mm
	Width 10.4mm
	Standards/Approvals UL
	Automotive Standard AEC-Q101

Datasheet - STP80N240K6

The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.

Worldwide best RDS(on) x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

100% avalanche tested

Zener-protected

STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP80N240K6

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