Infineon ISP Type P-Channel MOSFET, 3.9 A, 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1
- RS庫存編號:
- 235-4877
- 製造零件編號:
- ISP16DP10LMXTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD125.00
(不含稅)
TWD131.25
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 990 件從 2026年1月08日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD25.00 | TWD125.00 |
| 10 - 95 | TWD24.60 | TWD123.00 |
| 100 - 245 | TWD24.20 | TWD121.00 |
| 250 - 495 | TWD23.60 | TWD118.00 |
| 500 + | TWD23.20 | TWD116.00 |
* 參考價格
- RS庫存編號:
- 235-4877
- 製造零件編號:
- ISP16DP10LMXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.38Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 11.6nC | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Height | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.38Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 11.6nC | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Height 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
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