Infineon ISP Type P-Channel MOSFET, 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1
- RS庫存編號:
- 235-4875
- 製造零件編號:
- ISP14EP15LMXTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD75.00
(不含稅)
TWD78.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 850 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD7.50 | TWD75.00 |
| 20 - 90 | TWD7.30 | TWD73.00 |
| 100 - 240 | TWD7.20 | TWD72.00 |
| 250 - 490 | TWD7.00 | TWD70.00 |
| 500 + | TWD6.90 | TWD69.00 |
* 參考價格
- RS庫存編號:
- 235-4875
- 製造零件編號:
- ISP14EP15LMXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.29A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.38Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.6nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.29A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.38Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.6nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
相關連結
- Infineon ISP Type P-Channel MOSFET 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1
- Infineon ISP Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP20EP10LMXTSA1