Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN ISZ0703NLSATMA1

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TWD215.00

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TWD225.75

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下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
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每單位
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5 - 5TWD43.00TWD215.00
10 - 95TWD42.40TWD212.00
100 - 245TWD41.00TWD205.00
250 - 495TWD40.00TWD200.00
500 +TWD36.80TWD184.00

* 參考價格

包裝方式:
RS庫存編號:
232-6774
製造零件編號:
ISZ0703NLSATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

60V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.2mΩ

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

44W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

1.1 mm

Length

3.4mm

Height

3.4mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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