Infineon OptiMOS 5 Type N-Channel MOSFET, 86 A, 60 V, 8-Pin PQFN ISZ0702NLSATMA1
- RS庫存編號:
- 232-6772
- 製造零件編號:
- ISZ0702NLSATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD206.00
(不含稅)
TWD216.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 4,990 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD41.20 | TWD206.00 |
| 10 - 95 | TWD40.00 | TWD200.00 |
| 100 - 245 | TWD39.40 | TWD197.00 |
| 250 - 495 | TWD38.20 | TWD191.00 |
| 500 + | TWD37.40 | TWD187.00 |
* 參考價格
- RS庫存編號:
- 232-6772
- 製造零件編號:
- ISZ0702NLSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 65W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 65W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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