Infineon OptiMOS 5 Type N-Channel MOSFET, 59 A, 100 V, 8-Pin SO-8
- RS庫存編號:
- 232-6761
- 製造零件編號:
- ISC0804NLSATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD111,000.00
(不含稅)
TWD116,550.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD22.20 | TWD111,000.00 |
| 25000 + | TWD21.50 | TWD107,500.00 |
* 參考價格
- RS庫存編號:
- 232-6761
- 製造零件編號:
- ISC0804NLSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
相關連結
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