Infineon OptiMOS 5 Type N-Channel MOSFET, 150 A, 100 V, 8-Pin SO-8 ISC0802NLSATMA1

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TWD138.00

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TWD144.90

(含稅)

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2 - 8TWD69.00TWD138.00
10 - 98TWD67.00TWD134.00
100 - 248TWD66.00TWD132.00
250 - 498TWD63.50TWD127.00
500 +TWD62.50TWD125.00

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包裝方式:
RS庫存編號:
232-6757
製造零件編號:
ISC0802NLSATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.8mΩ

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

5.35mm

Length

6.1mm

Width

1.2 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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