Infineon CoolMOS Type N-Channel MOSFET, 106 A, 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- RS庫存編號:
- 232-3049
- 製造零件編號:
- IPW65R018CFD7XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD500.00
(不含稅)
TWD525.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年3月23日 起發貨
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* 參考價格
- RS庫存編號:
- 232-3049
- 製造零件編號:
- IPW65R018CFD7XKSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon CFD7 is super junction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and further more supports high power density solutions.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
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