製造零件編號

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

RS庫存編號:: 232-0419
製造零件編號:: IGLD60R190D1AUMA3
製造商:: Infineon

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD134.00

(不含稅)

TWD140.70

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,040 個，準備發貨

單位	每單位
1 - 9	TWD134.00
10 - 99	TWD131.00
100 - 249	TWD129.00
250 - 499	TWD126.00
500 +	TWD123.00

* 參考價格

RS庫存編號:: 232-0419
製造零件編號:: IGLD60R190D1AUMA3
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolGaN
	Package Type	LSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 600V
	Series CoolGaN
	Package Type LSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IGLD60R190D1AUMA3

The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

訂單超過 $1,300.00 免費送貨

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