onsemi NTB7D Type N-Channel MOSFET, 101 A, 150 V Enhancement, 4-Pin TO-263
- RS庫存編號:
- 230-9080
- 製造零件編號:
- NTB7D3N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD49,280.00
(不含稅)
TWD51,744.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | TWD61.60 | TWD49,280.00 |
| 1600 + | TWD60.40 | TWD48,320.00 |
* 參考價格
- RS庫存編號:
- 230-9080
- 製造零件編號:
- NTB7D3N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTB7D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTB7D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
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