onsemi NTP Type N-Channel MOSFET, 101 A, 150 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 214-8912
- 製造零件編號:
- NTP7D3N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD3,720.00
(不含稅)
TWD3,906.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD74.40 | TWD3,720.00 |
| 100 - 150 | TWD72.70 | TWD3,635.00 |
| 200 + | TWD71.10 | TWD3,555.00 |
* 參考價格
- RS庫存編號:
- 214-8912
- 製造零件編號:
- NTP7D3N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTP | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.75 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.53mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTP | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 15.75 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.53mm | ||
Automotive Standard No | ||
The ON Semiconductor NTP series is n-channel MOSFET with shielded gate MOSFET technology which has drain to source voltage of 150 V. It is typically used in synchronous rectification and micro solar inverter and etc.
Pb−Free
RoHS compliant
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