STMicroelectronics STL1 Type N-Channel MOSFET, 120 A, 80 V, 8-Pin PowerFLAT STL125N8F7AG
- RS庫存編號:
- 230-0097
- 製造零件編號:
- STL125N8F7AG
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 包，共 5 件）*
TWD480.00
(不含稅)
TWD504.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月03日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD96.00 | TWD480.00 |
| 10 - 95 | TWD93.60 | TWD468.00 |
| 100 - 245 | TWD91.20 | TWD456.00 |
| 250 - 495 | TWD88.80 | TWD444.00 |
| 500 + | TWD86.80 | TWD434.00 |
* 參考價格
- RS庫存編號:
- 230-0097
- 製造零件編號:
- STL125N8F7AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | STL1 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 1mm | |
| Length | 6.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series STL1 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 1mm | ||
Length 6.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics STL125N8F7AG is N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
High avalanche ruggedness
Wettable flank package
AEC-Q101 qualified
Excellent FoM
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