STMicroelectronics Single RF2L Type N-Channel MOSFET, 60 V Enhancement, 2-Pin B-2
- RS庫存編號:
- 230-0086
- 製造零件編號:
- RF2L36075CF2
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 120 件）*
TWD667,980.00
(不含稅)
TWD701,378.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月06日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 120 - 120 | TWD5,566.50 | TWD667,980.00 |
| 240 + | TWD5,399.50 | TWD647,940.00 |
* 參考價格
- RS庫存編號:
- 230-0086
- 製造零件編號:
- RF2L36075CF2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Operating Frequency | 3.5 GHz | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RF2L | |
| Package Type | B-2 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Channel Mode | Enhancement | |
| Maximum Operating Temperature | 200°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Length | 20.57mm | |
| Width | 19.44 mm | |
| Height | 3.61mm | |
| Automotive Standard | No | |
| Typical Power Gain | 12.5dB | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Operating Frequency 3.5 GHz | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RF2L | ||
Package Type B-2 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Channel Mode Enhancement | ||
Maximum Operating Temperature 200°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Length 20.57mm | ||
Width 19.44 mm | ||
Height 3.61mm | ||
Automotive Standard No | ||
Typical Power Gain 12.5dB | ||
The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Internal input matching for ease of use
Large positive and negative gate-source voltage range for improved class C operation
Excellent thermal stability, low HCI drift
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