onsemi Type N-Channel MOSFET, 175 A, 150 V N, 8-Pin DFN NTMTS4D3N15MC
- RS庫存編號:
- 229-6485
- 製造零件編號:
- NTMTS4D3N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD416.00
(不含稅)
TWD436.80
(含稅)
添加 8 件 件可免費送貨
最後的 RS 庫存
- 最終 214 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD208.00 | TWD416.00 |
| 10 - 98 | TWD201.50 | TWD403.00 |
| 100 - 248 | TWD196.50 | TWD393.00 |
| 250 - 498 | TWD192.00 | TWD384.00 |
| 500 + | TWD188.00 | TWD376.00 |
* 參考價格
- RS庫存編號:
- 229-6485
- 製造零件編號:
- NTMTS4D3N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 175A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 293W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 1.2 mm | |
| Height | 8.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 175A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 293W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 1.2 mm | ||
Height 8.5mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Minimize conduction losses
High peak current and low parasitic inductance
Offers a wider design margin for thermally challenged applications
Reduces switching spike
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