onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN NTMFSC010N08M7
- RS庫存編號:
- 229-6475
- 製造零件編號:
- NTMFSC010N08M7
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD241.00
(不含稅)
TWD253.05
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD48.20 | TWD241.00 |
| 10 - 95 | TWD46.40 | TWD232.00 |
| 100 - 245 | TWD45.00 | TWD225.00 |
| 250 - 495 | TWD44.00 | TWD220.00 |
| 500 + | TWD43.20 | TWD216.00 |
* 參考價格
- RS庫存編號:
- 229-6475
- 製造零件編號:
- NTMFSC010N08M7
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 78.1W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 78.1W | ||
Maximum Operating Temperature 175°C | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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