onsemi NTMFS Type N-Channel MOSFET, 41.9 A, 150 V N, 8-Pin SO-8 NTMFS022N15MC
- RS庫存編號:
- 229-6469
- 製造零件編號:
- NTMFS022N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD384.00
(不含稅)
TWD403.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,640 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD76.80 | TWD384.00 |
| 10 - 95 | TWD74.40 | TWD372.00 |
| 100 - 245 | TWD72.00 | TWD360.00 |
| 250 - 495 | TWD70.20 | TWD351.00 |
| 500 + | TWD69.00 | TWD345.00 |
* 參考價格
- RS庫存編號:
- 229-6469
- 製造零件編號:
- NTMFS022N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.3mm | |
| Width | 1.1 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.3mm | ||
Width 1.1 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
Minimize driver losses
Lowers switching noise/EMI
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