onsemi NTMFS Type N-Channel MOSFET, 273 A, 40 V Enhancement, 8-Pin SO-8FL NTMFS0D9N04XMT1G
- RS庫存編號:
- 220-596
- 製造零件編號:
- NTMFS0D9N04XMT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 5 件）*
TWD257.00
(不含稅)
TWD269.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月13日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | TWD51.40 | TWD257.00 |
| 50 - 95 | TWD49.80 | TWD249.00 |
| 100 - 495 | TWD48.40 | TWD242.00 |
| 500 - 995 | TWD47.40 | TWD237.00 |
| 1000 + | TWD46.60 | TWD233.00 |
* 參考價格
- RS庫存編號:
- 220-596
- 製造零件編號:
- NTMFS0D9N04XMT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8FL | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 121W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8FL | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 121W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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