onsemi SUPERFET III N-Channel MOSFET, 12 A, 650 V N, 3-Pin TO-220 FCPF250N65S3R0L-F154
- RS庫存編號:
- 229-6321
- 製造零件編號:
- FCPF250N65S3R0L-F154
- 製造商:
- onsemi
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TWD695.00
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TWD729.75
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 5 | TWD139.00 | TWD695.00 | - |
| 10 - 95 | TWD135.20 | TWD676.00 | 2% |
| 100 - 245 | TWD130.40 | TWD652.00 | 6% |
| 250 - 495 | TWD128.00 | TWD640.00 | 7% |
| 500 + | TWD125.20 | TWD626.00 | 9% |
* 參考價格
- RS庫存編號:
- 229-6321
- 製造零件編號:
- FCPF250N65S3R0L-F154
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.2mm | |
| Height | 4.8mm | |
| Width | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 150°C | ||
Length 16.2mm | ||
Height 4.8mm | ||
Width 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Pb−free
RoHS compliant
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