Infineon IPD Type P-Channel MOSFET, 85 A, 40 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 229-1834
- 製造零件編號:
- IPD85P04P4L06ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD54,000.00
(不含稅)
TWD56,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD21.60 | TWD54,000.00 |
| 12500 + | TWD20.90 | TWD52,250.00 |
* 參考價格
- RS庫存編號:
- 229-1834
- 製造零件編號:
- IPD85P04P4L06ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel logic level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
相關連結
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252 IPD85P04P407ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET, 15.1 A P TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252