製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

RS庫存編號:: 228-2900
製造零件編號:: SiR500DP-T1-RE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD79,200.00

(不含稅)

TWD83,160.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 3,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD26.40	TWD79,200.00
15000 +	TWD25.70	TWD77,100.00

* 參考價格

RS庫存編號:: 228-2900
製造零件編號:: SiR500DP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	350.8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.47mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	120nC
	Maximum Power Dissipation Pd	104.1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 350.8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.47mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 120nC
	Maximum Power Dissipation Pd 104.1W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiR500DP-T1-RE3

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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