Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
- RS庫存編號:
- 228-2902
- 製造零件編號:
- SiR500DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD319.00
(不含稅)
TWD334.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5,305 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD63.80 | TWD319.00 |
| 50 - 95 | TWD62.00 | TWD310.00 |
| 100 - 245 | TWD60.80 | TWD304.00 |
| 250 - 995 | TWD59.20 | TWD296.00 |
| 1000 + | TWD58.00 | TWD290.00 |
* 參考價格
- RS庫存編號:
- 228-2902
- 製造零件編號:
- SiR500DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Power Dissipation Pd | 104.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Power Dissipation Pd 104.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 30 V MOSFET.
100 % Rg and UIS tested
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