Vishay N-Channel 40 V Type N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK (8x8LR) SQJQ144AER-T1_GE3
- RS庫存編號:
- 225-9963
- 製造零件編號:
- SQJQ144AER-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD466.00
(不含稅)
TWD489.30
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,665 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD93.20 | TWD466.00 |
| 50 - 95 | TWD91.00 | TWD455.00 |
| 100 - 245 | TWD88.80 | TWD444.00 |
| 250 - 995 | TWD86.80 | TWD434.00 |
| 1000 + | TWD84.20 | TWD421.00 |
* 參考價格
- RS庫存編號:
- 225-9963
- 製造零件編號:
- SQJQ144AER-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 575A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | N-Channel 40 V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 600W | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.3mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 8 mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 575A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK (8x8LR) | ||
Series N-Channel 40 V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 600W | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Length 8.3mm | ||
Standards/Approvals AEC-Q101 | ||
Width 8 mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
相關連結
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 8-Pin PowerPAK (8x8LR) SQJQ148ER-T1_GE3
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 8-Pin PowerPAK (8x8LR)
- Vishay SQJQ144AE Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK (8x8L) SQJQ144AE-T1_GE3
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay SQJQ186ER Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3
- Vishay SQJQ144AE Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK (8x8L)
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
