Vishay TrenchFET N channel-Channel MOSFET, 189 A, 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- RS庫存編號:
- 735-253
- 製造零件編號:
- SQJQ570ER-T1_GE3
- 製造商:
- Vishay
N
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- RS庫存編號:
- 735-253
- 製造零件編號:
- SQJQ570ER-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 189A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | TrenchFET | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0105Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Length | 10.42mm | |
| Height | 1.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 189A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series TrenchFET | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0105Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Length 10.42mm | ||
Height 1.9mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
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