Vishay P-Channel 20 Type P-Channel MOSFET, 3.75 A, 20 V, 7-Pin SC-70
- RS庫存編號:
- 225-9935
- 製造零件編號:
- SQA401CEJW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD14,400.00
(不含稅)
TWD15,120.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年8月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD4.80 | TWD14,400.00 |
| 15000 + | TWD4.70 | TWD14,100.00 |
* 參考價格
- RS庫存編號:
- 225-9935
- 製造零件編號:
- SQA401CEJW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.75A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | P-Channel 20 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 13.6W | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.05 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.75A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series P-Channel 20 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 13.6W | ||
Maximum Operating Temperature 175°C | ||
Width 2.05 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
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