Vishay P-Channel 60-V Type P-Channel MOSFET, 11.5 A, 60 V, 8-Pin PowerPAK 1212 SQ7415CENW-T1_GE3
- RS庫存編號:
- 225-9934
- 製造零件編號:
- SQ7415CENW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD657.50
(不含稅)
TWD690.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 11,650 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD26.30 | TWD657.50 |
| 50 - 75 | TWD25.60 | TWD640.00 |
| 100 - 225 | TWD24.90 | TWD622.50 |
| 250 - 975 | TWD24.30 | TWD607.50 |
| 1000 + | TWD23.70 | TWD592.50 |
* 參考價格
- RS庫存編號:
- 225-9934
- 製造零件編號:
- SQ7415CENW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | P-Channel 60-V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 136mΩ | |
| Forward Voltage Vf | -0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series P-Channel 60-V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 136mΩ | ||
Forward Voltage Vf -0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
相關連結
- Vishay P-Channel 60-V Type P-Channel MOSFET 60 V, 8-Pin PowerPAK 1212
- Vishay Type N-Channel MOSFET 60 V PowerPAK 1212-8 SQS460EN-T1_GE3
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3
- Vishay Type N-Channel MOSFET 60 V PowerPAK 1212-8
- Vishay SQS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS966ENW-T1_GE3