Littelfuse LSIC1MO170T0750 Type N-Channel MOSFET, 4.5 A, 1700 V Enhancement, 7-Pin TO-263
- RS庫存編號:
- 223-3049
- 製造零件編號:
- LSIC1MO170T0750-TU
- 製造商:
- Littelfuse
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD12,050.00
(不含稅)
TWD12,652.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD241.00 | TWD12,050.00 |
| 100 - 200 | TWD233.80 | TWD11,690.00 |
| 250 - 450 | TWD226.80 | TWD11,340.00 |
| 500 - 950 | TWD220.00 | TWD11,000.00 |
| 1000 + | TWD213.40 | TWD10,670.00 |
* 參考價格
- RS庫存編號:
- 223-3049
- 製造零件編號:
- LSIC1MO170T0750-TU
- 製造商:
- Littelfuse
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Littelfuse | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-263 | |
| Series | LSIC1MO170T0750 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.6V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16.18mm | |
| Length | 10.18mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Littelfuse | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-263 | ||
Series LSIC1MO170T0750 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.6V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16.18mm | ||
Length 10.18mm | ||
Automotive Standard No | ||
The Littelfuse new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.
Optimized for high-frequency, high-efficiency applications
Extremely low gate charge and output
capacitance
Low gate resistance for high-frequency switching
Normally-off operations at all temperatures
Ultra-low on-resistance
Optimized package with separate driver source pin
MSL 1 Rated
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