Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 222-4866
- 製造零件編號:
- IMZ120R090M1HXKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 管，共 30 件）*
TWD4,779.00
(不含稅)
TWD5,017.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 570 件從 2026年1月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD159.30 | TWD4,779.00 |
| 150 + | TWD156.10 | TWD4,683.00 |
* 參考價格
- RS庫存編號:
- 222-4866
- 製造零件編號:
- IMZ120R090M1HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | IMZ1 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series IMZ1 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
相關連結
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